PART |
Description |
Maker |
2SJ486 |
RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开 Silicon P Channel MOS FET Low FrequencyPower Switching Silicon P-Channel MOS FET
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
3SK300 |
Silicon N Channel MOS FET Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
2SJ518 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
D1218UK |
CAT6 SOL PC PVC WHI 25FT PVC SOLID PATCH CORD 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-12.5V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应60W-12.5V-500MHz,推挽) METAL GATE RF SILICON FET
|
TT electronics Semelab, Ltd. TT electronics Semelab Limited Semelab(Magnatec) SEME-LAB[Seme LAB]
|
2SK735 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET 快速切换N沟道功率MOS FET
|
NEC, Corp. NEC[NEC]
|
4AJ11 |
Silicon P-Channel Power MOS FET Array FET Arrays
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
MTP10N40 MTP10N40E ON2540 MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system TMOS POWER FET 3.0 AMPERES 600 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc] ON Semiconductor
|
2SK3230B |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM N-CHANNEL SILICON J-FET
|
NEC
|
2SK3717 |
N-channel Silicon J-FET N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
NEC
|